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Epitaxial growth has been studied extensively, both experimentally and theoretically, as a subject of technological importance and scientific interest. In this talk, I will discuss recent progress and open challenges in understanding some fundamental aspects of epitaxial growth. In particular, I will address the following question: How are models of homoepitaxial growth or relaxation connected across different length and time scales? The models include: (i) atomistic master equations; (ii) nanoscale motion laws for line defects (steps); and (iii) fully continuum laws for the surface height. In this context, surface phenomena of crystals may exhibit an effective behavior dominated by microscale events. I will discuss these issues via selected examples.